Invention Grant
- Patent Title: High-frequency module
- Patent Title (中): 高频模块
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Application No.: US13973134Application Date: 2013-08-22
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Publication No.: US08687378B2Publication Date: 2014-04-01
- Inventor: Nobuyoshi Okuda , Masaaki Kanae , Naoki Hayasaka
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2011-228050 20111017
- Main IPC: H05K7/06
- IPC: H05K7/06 ; H01L23/49 ; H01L23/538

Abstract:
A high-frequency module includes first and second switch IC elements and a substrate. The first and second switch IC elements are the same or substantially the same IC chips, and are mounted in the same or substantially the same orientation. The first switch IC element is mounted on the substrate. The second switch IC element is mounted above the first switch IC element. Due to wire bonding, the individual pad electrodes of the first and second switch IC elements are connected to the land electrodes of the substrate, which are to be connected to the individual pad electrodes. Between a pad electrode and a land electrode connected to each other, another land electrode is not provided.
Public/Granted literature
- US20130335938A1 HIGH-FREQUENCY MODULE Public/Granted day:2013-12-19
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