Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13394430Application Date: 2011-07-21
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Publication No.: US08686545B2Publication Date: 2014-04-01
- Inventor: Masanori Minamio , Tatsuo Sasaoka
- Applicant: Masanori Minamio , Tatsuo Sasaoka
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-184603 20100820
- International Application: PCT/JP2011/004126 WO 20110721
- International Announcement: WO2012/023236 WO 20120223
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/00

Abstract:
A semiconductor device according to the present disclosure includes: a plate (13) having a through hole (15); a metal column (16) fixed to the through hole with an insulating member (17) interposed therebetween, and having a projection projecting from the upper surface of the plate; a semiconductor element (12) fixed to the projection; a lead frame (11) electrically connected to the semiconductor element; and a package (14) covering the semiconductor element, and also covering at least part of each of the plate, the metal column, and the lead frame. The lower surface (13b) of the plate is exposed from the package.
Public/Granted literature
- US20120161302A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-06-28
Information query
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