Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13147640Application Date: 2010-01-29
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Publication No.: US08686528B2Publication Date: 2014-04-01
- Inventor: Yudai Takanishi , Masao Moriguchi
- Applicant: Yudai Takanishi , Masao Moriguchi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2009-023776 20090204
- International Application: PCT/JP2010/000561 WO 20100129
- International Announcement: WO2010/089981 WO 20100812
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A semiconductor device of the present invention includes: a lower electrode (110); a contact layer (130) including a first contact layer (132), a second contact layer (134) and a third contact layer (136) overlapping with a semiconductor layer (120); and an upper electrode (140) including a first upper electrode (142), a second upper electrode (144) and a third upper electrode (146). The second contact layer (134) includes a first region (134a), and a second region (134b) separate from the first region (134a), and the second upper electrode (144) is directly in contact with the semiconductor layer (120) in a region between the first region (134a) and the second region (134b) of the second contact layer (134).
Public/Granted literature
- US20110303916A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-12-15
Information query
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