Invention Grant
US08686461B2 Light emitting diode (LED) die having stepped substrates and method of fabrication
有权
具有阶梯式衬底和制造方法的发光二极管（LED）裸片
- Patent Title: Light emitting diode (LED) die having stepped substrates and method of fabrication
- Patent Title (中): 具有阶梯式衬底和制造方法的发光二极管（LED）裸片
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Application No.: US13325376Application Date: 2011-12-14
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Publication No.: US08686461B2Publication Date: 2014-04-01
- Inventor: Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
- Applicant: Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
- Applicant Address: TW Chu-nan
- Assignee: SemiLEDS Optoelectronics Co., Ltd.
- Current Assignee: SemiLEDS Optoelectronics Co., Ltd.
- Current Assignee Address: TW Chu-nan
- Agent Stephen A. Gratton
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
Public/Granted literature
- US20120168716A1 Light Emitting Diode (LED) Die Having Stepped Substrates And Method Of Fabrication Public/Granted day:2012-07-05
Information query
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