Invention Grant
US08686403B2 Organic luminescent device including a first electrode, two or more organic layers and a second electrode and a production method for the same 有权
有机发光装置,包括第一电极,两个或更多个有机层和第二电极及其制备方法

  • Patent Title: Organic luminescent device including a first electrode, two or more organic layers and a second electrode and a production method for the same
  • Patent Title (中): 有机发光装置,包括第一电极,两个或更多个有机层和第二电极及其制备方法
  • Application No.: US12863370
    Application Date: 2009-01-19
  • Publication No.: US08686403B2
    Publication Date: 2014-04-01
  • Inventor: Min-Soo KangSe-Hwan SonJeoung-Kwen Noh
  • Applicant: Min-Soo KangSe-Hwan SonJeoung-Kwen Noh
  • Applicant Address: KR Seoul
  • Assignee: LG Chem Ltd.
  • Current Assignee: LG Chem Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: McKenna Long & Aldridge
  • Priority: KR10-2008-0005812 20080118
  • International Application: PCT/KR2009/000283 WO 20090119
  • International Announcement: WO2009/091231 WO 20090723
  • Main IPC: H01L29/08
  • IPC: H01L29/08
Organic luminescent device including a first electrode, two or more organic layers and a second electrode and a production method for the same
Abstract:
Disclosed is an organic light emitting device comprising a first electrode, two or more organic compound layers, and a second electrode, wherein the first electrode comprises a conductive layer and an n-type organic compound layer which is in contact with the conductive layer, one of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction together with the n-type organic compound layer of the first electrode, energy levels of the layers satisfy the following Expressions (1) and (2), and one or more layers interposed between the p-type organic compound layer and the second electrode are n-doped with alkali earth metal: 0 eV
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的;按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08 ...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的;并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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