An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable cw-powers. The device includes a non c-plane template with an ultraviolet light-emitting structure thereon. The template includes a first buffer layer, 321, on a substrate, 100, then a second buffer layer, 421, on the first preferably with a strain-relieving layer, 302, in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600. Another semiconductor layer, 700, having a second type of conductivity is applied next. Two metal contacts, 980 and 990, are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the light emitting device.