Invention Grant
- Patent Title: Characterization of nanoscale structures using an ultrafast electron microscope
- Patent Title (中): 使用超快电子显微镜表征纳米级结构
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Application No.: US13864113Application Date: 2013-04-16
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Publication No.: US08686359B2Publication Date: 2014-04-01
- Inventor: Ahmed H. Zewail
- Applicant: California Institute of Technology
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G01N23/00
- IPC: G01N23/00 ; G21K7/00
Abstract:
The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).
Public/Granted literature
- US20130234023A1 CHARACTERIZATION OF NANOSCALE STRUCTURES USING AN ULTRAFAST ELECTRON MICROSCOPE Public/Granted day:2013-09-12
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