Invention Grant
- Patent Title: Avalanche photodiode circuits with protection against damage from sudden increases in incident light level
- Patent Title (中): 雪崩光电二极管电路,防止入射光级突然增加造成的损坏
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Application No.: US13059437Application Date: 2008-08-20
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Publication No.: US08686343B2Publication Date: 2014-04-01
- Inventor: David Dyer
- Applicant: David Dyer
- Applicant Address: SE Stockholm
- Assignee: Telefonaktiebolaget L M Ericsson (publ)
- Current Assignee: Telefonaktiebolaget L M Ericsson (publ)
- Current Assignee Address: SE Stockholm
- Agency: Potomac Patent Group PLLC
- International Application: PCT/EP2008/060872 WO 20080820
- International Announcement: WO2010/020278 WO 20100225
- Main IPC: H01J40/14
- IPC: H01J40/14

Abstract:
An avalanche photodiode circuit, comprising an avalanche photodiode typically connected in parallel to a capacitor, in which there is provided a current shunt circuit which activates to shunt current from the avalanche photodiode in response to detecting a decrease in the impedance of the avalanche photodiode, typically measured by determining the slope of the voltage across the avalanche photodiode. By using this circuit, the avalanche photodiode can be protected from sudden increases in incident light level decreasing the impedance of the avalanche photodiode to an extent that the energy such as is stored in the capacitor can damage the structure of the avalanche photodiode.
Public/Granted literature
- US20110233385A1 Avalanche Photodiode Circuits Public/Granted day:2011-09-29
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