Invention Grant
- Patent Title: Semiconductor device and solar battery using the same
- Patent Title (中): 半导体器件和太阳能电池使用相同
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Application No.: US13263609Application Date: 2010-04-06
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Publication No.: US08686281B2Publication Date: 2014-04-01
- Inventor: Shigenori Yuuya
- Applicant: Shigenori Yuuya
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-093536 20090408
- International Application: PCT/JP2010/002510 WO 20100406
- International Announcement: WO2010/116723 WO 20101014
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/042
Abstract:
A semiconductor device includes a semiconductor circuit on an insulated metal substrate, which includes an anodized film formed on at least one side of an Al substrate, wherein the Al substrate has a potential higher than an average potential of the semiconductor circuit when the semiconductor circuit is driven.
Public/Granted literature
- US20120017993A1 SEMICONDUCTOR DEVICE AND SOLAR BATTERY USING THE SAME Public/Granted day:2012-01-26
Information query
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