Semiconductor structure and manufacturing method thereof

Invention Grant

US08685860B2 Semiconductor structure and manufacturing method thereof 有权

Title translation: 半导体结构及其制造方法

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Patent Title: Semiconductor structure and manufacturing method thereof
Patent Title (中): 半导体结构及其制造方法
Application No.: US13655374

Application Date: 2012-10-18
Publication No.: US08685860B2

Publication Date: 2014-04-01
Inventor: Wen-Hsiung Chang
Applicant: Ineffable Cellular Limited Liability Company
Applicant Address: US DE Wilmington
Assignee: Ineffable Cellular Limited Liability Company
Current Assignee: Ineffable Cellular Limited Liability Company
Current Assignee Address: US DE Wilmington
Main IPC: H01L21/311
IPC: H01L21/311

Semiconductor structure and manufacturing method thereof

Abstract:

A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. Firstly, a semiconductor substrate having an active surface and a back surface is provided. The active surface is opposite to the back surface, and the semiconductor substrate includes at least one grounding pad disposed on the active surface. Secondly, at least one through silicon via is formed through the semiconductor substrate from the back surface to the active surface thus exposing the grounding pad. Then, a conductive layer is formed on the back surface of the semiconductor substrate and filled into the through silicon via to electrically connect to the grounding pad and the semiconductor substrate.

Abstract(Chinese):

提供半导体结构及其制造方法。该方法包括以下步骤。首先，提供具有有源面和背面的半导体基板。活性表面与背面相对，并且半导体衬底包括设置在有源表面上的至少一个接地焊盘。其次，通过半导体衬底从背表面到有源表面形成至少一个通硅通孔，从而露出接地焊盘。然后，在半导体基板的背面上形成导电层，并填充到贯穿硅通孔中，以电连接到接地焊盘和半导体基板。

Public/Granted literature

US20130113100A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-05-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀