Invention Grant
- Patent Title: Manufacturing method of silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件的制造方法
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Application No.: US13355710Application Date: 2012-01-23
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Publication No.: US08685848B2Publication Date: 2014-04-01
- Inventor: Yoshinori Matsuno , Yoichiro Tarui
- Applicant: Yoshinori Matsuno , Yoichiro Tarui
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-118661 20110527
- Main IPC: H01L21/329
- IPC: H01L21/329
Abstract:
A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer.
Public/Granted literature
- US20120302051A1 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2012-11-29
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