A method of forming a transistor device includes forming a dummy gate stack structure over an SOI starting substrate, comprising a bulk layer, a global BOX layer over the bulk layer, and an SOI layer over the global BOX layer. Self-aligned trenches are formed completely through portions of the SOI layer and the global BOX layer at source and drain regions. Silicon is epitaxially regrown in the source and drain regions, with a local BOX layer re-established in the epitaxially regrown silicon, adjacent to the global BOX layer. A top surface of the local BOX layer is below a top surface of the global BOX layer. Embedded source and drain stressors are formed in the source and drain regions, adjacent a channel region. Silicide contacts are formed on the source and drain regions. The dummy gate stack structure is removed, and a final gate stack structure is formed.