Invention Grant
- Patent Title: Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
- Patent Title (中): 使用氢气载气使碳和磷掺杂的硅的外延生长
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Application No.: US12860236Application Date: 2010-08-20
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Publication No.: US08685845B2Publication Date: 2014-04-01
- Inventor: Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
- Applicant: Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H2) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H2) carrier gas.
Public/Granted literature
- US20120043556A1 EPITAXIAL GROWTH OF SILICON DOPED WITH CARBON AND PHOSPHORUS USING HYDROGEN CARRIER GAS Public/Granted day:2012-02-23
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