Invention Grant
- Patent Title: Method for manufacturing thin film integrated circuit, and element substrate
- Patent Title (中): 薄膜集成电路和元件基板的制造方法
-
Application No.: US13101400Application Date: 2011-05-05
-
Publication No.: US08685835B2Publication Date: 2014-04-01
- Inventor: Shunpei Yamazaki , Koji Dairiki
- Applicant: Shunpei Yamazaki , Koji Dairiki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-031064 20040206
- Main IPC: H01L21/78
- IPC: H01L21/78

Abstract:
Applications and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of being produced at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film of as an active region over the separation layer, wherein the thin film integrated circuit is not separated. In the case of using an insulating substrate, there is less limitation on the shape of the mother substrate when compared to a case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.
Public/Granted literature
- US20110212575A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE Public/Granted day:2011-09-01
Information query
IPC分类: