Invention Grant
- Patent Title: Hybrid high voltage device and manufacturing method thereof
- Patent Title (中): 混合高压器件及其制造方法
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Application No.: US13529963Application Date: 2012-06-21
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Publication No.: US08685824B2Publication Date: 2014-04-01
- Inventor: Tsung-Yi Huang , Chien-Hao Huang
- Applicant: Tsung-Yi Huang , Chien-Hao Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Richtek Technology Corporation, R.O.C.
- Current Assignee: Richtek Technology Corporation, R.O.C.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention discloses a hybrid high voltage device and a manufacturing method thereof. The hybrid high voltage device is formed in a first conductive type substrate, and includes at least one lateral double diffused metal oxide semiconductor (LDMOS) device region and at least one vent device region, wherein the LDMOS device region and the vent device region are connected in a width direction and arranged in an alternating order. Besides, corresponding high voltage wells, sources, drains, body regions, and gates of the LDMOS device region and the vent device region are connected to each other respectively.
Public/Granted literature
- US20130341719A1 Hybrid High Voltage Device and Manufacturing Method Thereof Public/Granted day:2013-12-26
Information query
IPC分类:
