Metal gate structures for CMOS transistor devices having reduced parasitic capacitance

Invention Grant

US08685817B1 Metal gate structures for CMOS transistor devices having reduced parasitic capacitance 失效

Title translation: 具有减小的寄生电容的CMOS晶体管器件的金属栅极结构

Please log in to see more content

Patent Title: Metal gate structures for CMOS transistor devices having reduced parasitic capacitance
Patent Title (中): 具有减小的寄生电容的CMOS晶体管器件的金属栅极结构
Application No.: US13680560

Application Date: 2012-11-19
Publication No.: US08685817B1

Publication Date: 2014-04-01
Inventor: Jin Cai , Chengwen Pei , Robert R. Robison , Ping-Chuan Wang
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Michael LeStrange
Main IPC: H01L21/8238
IPC: H01L21/8238

Metal gate structures for CMOS transistor devices having reduced parasitic capacitance

Abstract:

A method of forming a field effect transistor (FET) device includes forming a gate structure over a substrate, the gate structure including a wide bottom portion and a narrow portion formed on top of the bottom portion; the wide bottom portion comprising a metal material and having a first width that corresponds substantially to a transistor channel length, and the narrow portion also including a metal material having a second width smaller than the first width.

Abstract(Chinese):

形成场效应晶体管（FET）器件的方法包括在衬底上形成栅极结构，所述栅极结构包括宽的底部和形成在底部的顶部上的窄部; 所述宽底部包括金属材料并且具有基本上对应于晶体管沟道长度的第一宽度，并且所述窄部分还包括具有小于所述第一宽度的第二宽度的金属材料。

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS