Invention Grant
US08685816B2 Methods of forming semiconductor devices by forming semiconductor channel region materials prior to forming isolation structures
有权
通过在形成隔离结构之前形成半导体沟道区材料来形成半导体器件的方法
- Patent Title: Methods of forming semiconductor devices by forming semiconductor channel region materials prior to forming isolation structures
- Patent Title (中): 通过在形成隔离结构之前形成半导体沟道区材料来形成半导体器件的方法
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Application No.: US13493003Application Date: 2012-06-11
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Publication No.: US08685816B2Publication Date: 2014-04-01
- Inventor: Robert C. Lutz
- Applicant: Robert C. Lutz
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
One example of a method disclosed herein for forming a transistor surrounded by an isolation structure includes the steps of, prior to forming the isolation structure, forming a semiconductor material on a region of a semiconducting substrate, after forming the semiconductor material, forming the isolation structure in the substrate around the semiconductor material, and forming a gate structure above the semiconductor material.
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