Transistor devices including stressors are disclosed. One such transistor device includes a channel region, a dielectric layer and a semiconductor substrate. The channel region is configured to provide a conductive channel between a source region and a drain region. In addition, the dielectric layer is below the channel region and is configured to electrically insulate the channel region. Further, the semiconductor substrate, which is below the channel region and below the dielectric layer, includes dislocation defects at a top surface of the semiconductor substrate, where the dislocation defects are collectively oriented to impose a compressive strain on the channel region such that charge carrier mobility is enhanced in the channel region.