Invention Grant
- Patent Title: Semiconductor device package having backside contact and method for manufacturing
- Patent Title (中): 具有背面接触的半导体器件封装和制造方法
-
Application No.: US13397034Application Date: 2012-02-15
-
Publication No.: US08685790B2Publication Date: 2014-04-01
- Inventor: Alan J. Magnus , Carl E. D. Acosta , Douglas G. Mitchell , Justin E. Poarch
- Applicant: Alan J. Magnus , Carl E. D. Acosta , Douglas G. Mitchell , Justin E. Poarch
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Jonathan N. Geld
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method and apparatus for forming a backside contact, electrical and/or thermal, for die encapsulated in a semiconductor device package are provided. Die of varying thicknesses can be accommodated within the semiconductor device package. Embodiments of the present invention provide a conductive pedestal coupled to a backside contact of a die, where the coupling is performed prior to encapsulating the die within the package. In addition, conductive pedestals coupled to varying die within a semiconductor device package are of such a thickness that each conductive pedestal can be exposed on the back side of the package without exposing or damaging the backside of any encapsulated die. Embodiments of the present invention provide for the conductive pedestals being made of electrically or thermally conductive material and coupled to the device die contact using an electrically and/or thermally conductive adhesive.
Public/Granted literature
- US20130207255A1 SEMICONDUCTOR DEVICE PACKAGE HAVING BACKSIDE CONTACT AND METHOD FOR MANUFACTURING Public/Granted day:2013-08-15
Information query
IPC分类: