Invention Grant
- Patent Title: Contact resistance test structure and method suitable for three-dimensional integrated circuits
- Patent Title (中): 接触电阻测试结构和适用于三维集成电路的方法
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Application No.: US13780865Application Date: 2013-02-28
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Publication No.: US08685760B2Publication Date: 2014-04-01
- Inventor: Huilong Zhu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: G01R31/26
- IPC: G01R31/26
Abstract:
A contact resistance test structure, a method for fabricating the contact resistance test structure and a method for measuring a contact resistance while using the contact resistance test structure are all predicated upon two parallel conductor lines (or multiples thereof) that are contacted by one perpendicular conductor line absent a via interposed there between. The test structure and related methods are applicable within the context of three-dimensional integrated circuits.
Public/Granted literature
- US20130169307A1 CONTACT RESISTANCE TEST STRUCTURE AND METHOD SUITABLE FOR THREE-DIMENSIONAL INTEGRATED CIRCUITS Public/Granted day:2013-07-04
Information query
