Invention Grant
- Patent Title: Radiation source, lithographic apparatus and device manufacturing method
- Patent Title (中): 辐射源,光刻设备和器件制造方法
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Application No.: US13058788Application Date: 2009-07-13
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Publication No.: US08685632B2Publication Date: 2014-04-01
- Inventor: Antonius Theodorus Wilhelmus Kempen , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Erik Roelof Loopstra
- Applicant: Antonius Theodorus Wilhelmus Kempen , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Erik Roelof Loopstra
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- International Application: PCT/EP2009/058898 WO 20090713
- International Announcement: WO2010/018039 WO 20100218
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G21K1/00

Abstract:
A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.
Public/Granted literature
- US20110143288A1 RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD Public/Granted day:2011-06-16
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