A nozzle is moved while supplying a photoresist liquid from a slit. A photoresist layer is formed on a film. A resist pattern which covers a portion of the film is formed from the photoresist layer by photolithography. Inspection of the resist pattern is performed. The photolithography includes an exposure which is performed so as to transfer a latent image to the photoresist layer, and a development of the photoresist layer which is performed so as to leave the latent image. The latent image contains a dummy latent image which extends in an unbroken manner parallel to the longitudinal direction of the slit. The resist pattern contains a dummy resist formed correspondingly to the dummy latent image. The inspection of the resist pattern includes the detection of the presence or non-presence of a cut in the dummy resist in the longitudinal direction.