Invention Grant
US08685273B2 Etching agent for type II InAs/GaInSb superlattice epitaxial materials
有权
II型InAs / GaInSb超晶格外延材料的蚀刻剂
- Patent Title: Etching agent for type II InAs/GaInSb superlattice epitaxial materials
- Patent Title (中): II型InAs / GaInSb超晶格外延材料的蚀刻剂
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Application No.: US13669663Application Date: 2012-11-06
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Publication No.: US08685273B2Publication Date: 2014-04-01
- Inventor: Edward H Aifer , Sergey I Maximenko
- Applicant: Edward H Aifer , Sergey I Maximenko
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Stephen T. Hunnius
- Main IPC: C09K13/08
- IPC: C09K13/08
Abstract:
This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).
Public/Granted literature
- US20130122715A1 Etching Agent for Type II InAs/GaInSb Superlattice Epitaxial Materials Public/Granted day:2013-05-16
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