Invention Grant
US08685161B2 Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration
有权
使用包括具有阶梯状构造的热屏蔽的熔融夹具形成蓝宝石晶体的方法
- Patent Title: Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration
- Patent Title (中): 使用包括具有阶梯状构造的热屏蔽的熔融夹具形成蓝宝石晶体的方法
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Application No.: US13396288Application Date: 2012-02-14
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Publication No.: US08685161B2Publication Date: 2014-04-01
- Inventor: John W. Locher , Steven A. Zanella , Ralph L. MacLean, Jr. , Herbert Ellsworth Bates
- Applicant: John W. Locher , Steven A. Zanella , Ralph L. MacLean, Jr. , Herbert Ellsworth Bates
- Applicant Address: US MA Worcester
- Assignee: Saint-Gobain Ceramics & Plastics, Inc.
- Current Assignee: Saint-Gobain Ceramics & Plastics, Inc.
- Current Assignee Address: US MA Worcester
- Agency: Abel Law Group, LLP
- Agent Robert N. Young
- Main IPC: C30B15/34
- IPC: C30B15/34 ; C30B15/30
Abstract:
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
Public/Granted literature
- US20120145069A1 MELT FIXTURE INCLUDING THERMAL SHIELDS HAVING A STEPPED CONFIGURATION AND A METHODS OF USING THE SAME Public/Granted day:2012-06-14
Information query
IPC分类:
