Invention Grant
- Patent Title: Chemical mechanical planarization pad with void network
- Patent Title (中): 化学机械平面化垫与空隙网络
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Application No.: US12185737Application Date: 2008-08-04
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Publication No.: US08684794B2Publication Date: 2014-04-01
- Inventor: Paul Lefevre , Oscar K. Hsu , David Adam Wells , Scott Xin Qiao , Anoop Mathew , Guangwei Wu
- Applicant: Paul Lefevre , Oscar K. Hsu , David Adam Wells , Scott Xin Qiao , Anoop Mathew , Guangwei Wu
- Applicant Address: KR Cheonan-Si
- Assignee: FNS Tech Co., Ltd.
- Current Assignee: FNS Tech Co., Ltd.
- Current Assignee Address: KR Cheonan-Si
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Main IPC: B24B7/22
- IPC: B24B7/22 ; B24D3/34

Abstract:
A polishing pad and a method of producing a polishing pad. The method includes providing a mold, having a first cavity and a second cavity, wherein the first cavity defines a recess, providing a polymer matrix material including void forming elements in the recess, forming a polishing pad and removing at least a portion of the elements from the polishing pad forming void spaces within the polishing pad by one of a chemical method or mechanical method, prior to use in chemical/mechanical planarization procedures.
Public/Granted literature
- US20090258588A1 Chemical Mechanical Planarization Pad With Void Network Public/Granted day:2009-10-15
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