Invention Grant
- Patent Title: Plasma process apparatus and plasma process method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US12768799Application Date: 2010-04-28
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Publication No.: US08683943B2Publication Date: 2014-04-01
- Inventor: Naomi Onodera , Kiyohiko Gokon , Jun Sato
- Applicant: Naomi Onodera , Kiyohiko Gokon , Jun Sato
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2009-112319 20090501; JP2010-039446 20100224
- Main IPC: C23C16/509
- IPC: C23C16/509 ; C23C16/505 ; C23C16/52 ; H01L21/306 ; C23F1/00 ; C23C16/06 ; C23C16/22

Abstract:
A disclosed plasma process apparatus is disclosed that applies a plasma process to an object to be processed, including a cylindrical processing container configured to be evacuatable to vacuum, a holding unit configured to hold plural objects to be processed and inserted into and to be extracted from the cylindrical processing container, a gas supplying unit configured to supply a gas into the processing container, an activating unit configured to be located along a longitudinal direction of the processing container and to activate the gas by plasma generated by a high frequency power, a cylindrical shield cover configured to surround a periphery of the processing container and to be connected to ground for shielding from high frequency, and a cooling device configured to cause the cooling gas to flow through a space between the cylindrical shield cover and the cylindrical processing container during the plasma process.
Public/Granted literature
- US20100278999A1 PLASMA PROCESS APPARATUS AND PLASMA PROCESS METHOD Public/Granted day:2010-11-04
Information query
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