Invention Grant
- Patent Title: Nonvolatile memory device and method for operating the same
- Patent Title (中): 非易失性存储器件及其操作方法
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Application No.: US12488616Application Date: 2009-06-22
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Publication No.: US08677053B2Publication Date: 2014-03-18
- Inventor: Ji-Hyae Bae , Kyoung-Wook Park
- Applicant: Ji-Hyae Bae , Kyoung-Wook Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0038531 20090430
- Main IPC: G06F12/02
- IPC: G06F12/02
Abstract:
A nonvolatile memory device includes a selecting unit configured to select one of a read data or a program signal indicating a program period, an output unit configured to output an output signal of the selecting unit to the outside of a chip, and an output pin connected to the output unit.
Public/Granted literature
- US20100281203A1 Nonvolatile Memory Device and Method for Operating the Same Public/Granted day:2010-11-04
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