A method and circuit for implementing delay correction in static random access memory (SRAM), and a design structure on which the subject circuit resides are provided. The SRAM circuit includes a precharge enable signal coupled between precharge near and precharge far signals and wordline near and wordline far signals of the SRAM. A precharge pull down device is coupled between the precharge far signal and ground and is controlled responsive to the precharge enable signal to decrease a time delay of the falling transition of the precharge far signal. A respective word line pull up device is coupled between a respective wordline far signal and a voltage supply rail and is controlled responsive to the precharge enable signal to increase wordline voltage level upon a rising transition of the wordline far signal.