Invention Grant
- Patent Title: Flash memory device and related program verification method
- Patent Title (中): 闪存设备及相关程序验证方法
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Application No.: US13235533Application Date: 2011-09-19
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Publication No.: US08675416B2Publication Date: 2014-03-18
- Inventor: Ji-Sang Lee
- Applicant: Ji-Sang Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0092489 20100920
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A nonvolatile memory device performs a program operation using an incremental pulse programming (ISPP) scheme in which a plurality of program loops alternate between a coarse-fine verify operation, and a fine verify operation according to a value of a program loop counter.
Public/Granted literature
- US20120069674A1 FLASH MEMORY DEVICE AND RELATED PROGRAM VERIFICATION METHOD Public/Granted day:2012-03-22
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