Invention Grant
US08667210B2 Memory management method, memory controller and memory storage apparatus
有权
存储器管理方法,存储器控制器和存储器存储装置
- Patent Title: Memory management method, memory controller and memory storage apparatus
- Patent Title (中): 存储器管理方法,存储器控制器和存储器存储装置
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Application No.: US13109968Application Date: 2011-05-17
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Publication No.: US08667210B2Publication Date: 2014-03-04
- Inventor: Chih-Kang Yeh
- Applicant: Chih-Kang Yeh
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW100104918A 20110215
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A memory management method for managing physical units of a rewritable non-volatile memory module is provided. In the method, the physical units are grouped into at least a data area and a free area. The method includes obtaining empty physical units from the free area to configure a first global random area and obtaining empty physical units from the data area to configure a second global random area. The method further includes using the physical units of the first global random area to write updated data, and using the physical units of the second global random area to write other updated data after the physical units of the first global random area are written full of the updated data. Accordingly, the method can increase the storage space of a global random area, and thereby reduces data merging operations and shortens the time for executing a write command.
Public/Granted literature
- US20120210075A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS Public/Granted day:2012-08-16
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