Invention Grant
- Patent Title: Semiconductor laser module
- Patent Title (中): 半导体激光模块
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Application No.: US13203529Application Date: 2010-03-17
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Publication No.: US08665919B2Publication Date: 2014-03-04
- Inventor: Tatsuya Kimoto , Kazuaki Kiyota
- Applicant: Tatsuya Kimoto , Kazuaki Kiyota
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Lowe Hauptman & Ham, LLP
- Priority: JP2009-077444 20090326
- International Application: PCT/JP2010/054601 WO 20100317
- International Announcement: WO2010/110152 WO 20100930
- Main IPC: H01S5/06
- IPC: H01S5/06 ; H01S5/0687

Abstract:
A semiconductor laser module includes a semiconductor device including a semiconductor laser and a bending waveguide through which a laser light emitted from the semiconductor laser propagates, a beam splitter splitting the laser light into a first laser light and a second laser light, a plurality of detectors respectively arranged at different positions in a cross section of a light flux of the second laser light to detect the second laser light, and a waveform shaping unit provided on an optical path of the laser light. The waveform shaping unit is configured to make a relation between an output of the semiconductor laser and detection values of the detectors approach a linear relation.
Public/Granted literature
- US20110310916A1 SEMICONDUCTOR LASER MODULE Public/Granted day:2011-12-22
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