Invention Grant
- Patent Title: Memory circuit and control method thereof
- Patent Title (中): 存储电路及其控制方法
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Application No.: US13095153Application Date: 2011-04-27
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Publication No.: US08665663B2Publication Date: 2014-03-04
- Inventor: Kallol Mazumder , Scott E. Smith
- Applicant: Kallol Mazumder , Scott E. Smith
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agency: Novak Druce Bove + Quigg LLP
- Main IPC: G11C7/22
- IPC: G11C7/22

Abstract:
A memory circuit according to one embodiment of the present invention includes a clock driver and an ODT timer. The clock driver is configured to provide a system clock signal based on a root clock signal when the memory circuit is in a read mode, and is configured to stop providing the system clock signal when the memory circuit is not in the read mode. The ODT timer is configured to provide a system ODT signal when the memory circuit is not in the read mode, wherein the transition edge of the system ODT signal is aligned with the transition edge of the root clock signal.
Public/Granted literature
- US20120275238A1 MEMORY CIRCUIT AND CONTROL METHOD THEREOF Public/Granted day:2012-11-01
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