Invention Grant
US08665642B2 Pattern-sensitive coding of data for storage in multi-level memory cells
有权
用于存储在多级存储器单元中的数据的模式敏感编码
- Patent Title: Pattern-sensitive coding of data for storage in multi-level memory cells
- Patent Title (中): 用于存储在多级存储器单元中的数据的模式敏感编码
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Application No.: US13140345Application Date: 2009-10-08
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Publication No.: US08665642B2Publication Date: 2014-03-04
- Inventor: Bohuslav Rychlik , John Eric Linstadt , Brent Steven Haukness , Steven C. Woo
- Applicant: Bohuslav Rychlik , John Eric Linstadt , Brent Steven Haukness , Steven C. Woo
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Morgan, Lewis & Bockius LLP
- International Application: PCT/US2009/059994 WO 20091008
- International Announcement: WO2010/077408 WO 20100708
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A method of operating a memory device includes receiving first and second sets of bits to be stored in multi-level cells in the device. A multi-level encoding is selected from among a plurality of multi-level encodings for storing the first and second sets of bits in the multi-level cells. Each multi-level encoding includes at least four encoding levels for a respective multi-level cell. Respective multi-level encodings have respective costs associated with programming the first and second sets of bits into the multi-level cells in accordance with the respective multi-level encodings. The multi-level encoding is selected based on the respective costs of the respective encodings. The first and second sets of bits are encoded in accordance with the selected multi-level encoding to produce encoded data for storage in the device such that a respective multi-level cell stores respective bits from both the first and second sets of bits.
Public/Granted literature
- US20110286267A1 Pattern-Sensitive Coding of Data for Storage in Multi-Level Memory Cells Public/Granted day:2011-11-24
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