Invention Grant
US08665633B2 Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device 有权
非易失性可变电阻存储元件写入方法和非易失性可变电阻存储器件

Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device
Abstract:
A method of writing data to a variable resistance element (10a) that reversibly changes between a high resistance state and a low resistance state according to a polarity of an applied voltage, as a voltage applied to an upper electrode (11) with respect to a lower electrode (14t): a positive voltage is applied in a high resistance writing step (405) to set the variable resistance element to a high resistance state (401); a negative voltage is applied in a low resistance writing step (406, 408) to set the variable resistance element to a low resistance state (403, 402); and a positive voltage is applied in a low resistance stabilization writing step (404) after the negative voltage is applied in the low resistance writing step, thereby setting the variable resistance element through the low resistance state to the high resistance state.
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