Invention Grant
- Patent Title: Monolithic integrated circuit chip integrating multiple devices
- Patent Title (中): 集成多个器件的单片集成电路芯片
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Application No.: US13558255Application Date: 2012-07-25
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Publication No.: US08665013B2Publication Date: 2014-03-04
- Inventor: Jeffrey H. Saunders
- Applicant: Jeffrey H. Saunders
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Christie, Parker & Hale, LLP
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
A monolithic integrated circuit (IC) chip containing a plurality of transistors, including: a substrate; a first transistor on the substrate; and a second transistor integrally formed on the substrate with the first transistor, the second transistor having a different structure than the first transistor, wherein the first transistor includes a first material system and the second transistor includes a second material system different from the first material system. The monolithic IC chip may further include a third transistor integrally formed on the substrate with the first and second transistors. The first transistor may include gallium nitride (GaN) and the second and third transistors may include silicon carbide (SiC).
Public/Granted literature
- US20140028387A1 MONOLITHIC INTEGRATED CIRCUIT CHIP INTEGRATING MULTIPLE DEVICES Public/Granted day:2014-01-30
Information query
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