Invention Grant
- Patent Title: Controlling a MOS transistor
- Patent Title (中): 控制MOS晶体管
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Application No.: US12159670Application Date: 2007-01-04
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Publication No.: US08665004B2Publication Date: 2014-03-04
- Inventor: Hugues Doffin
- Applicant: Hugues Doffin
- Applicant Address: FR Creteil
- Assignee: Valeo Equipements Electriques Moteur
- Current Assignee: Valeo Equipements Electriques Moteur
- Current Assignee Address: FR Creteil
- Agency: Berenato & White, LLC
- Priority: FR0600571 20060123
- International Application: PCT/FR2007/050610 WO 20070104
- International Announcement: WO2007/083048 WO 20070726
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A device for controlling (10) a power transistor (5), comprises: an amplifying device (15) for monitoring the transistor gate (5) via an output control signal, the device including: a first input connected to the transistor drain, the whole assembly forming a first circuit portion; a second input connected to the transistor source, the whole assembly forming a second circuit portion. The control device comprises means for producing a polarizing current (I1, I2), the current being injected into the first and second inputs (NEG, POS) so as to offset the drain-source voltage measurement and maintain a linear operating mode of the output control signal, prior to opening the transistor, and the same number of N semiconductor junctions in the first and second circuit portions. The device is applicable in particular on battery charging devices.
Public/Granted literature
- US20090302927A1 CONTROLLING A MOS TRANSISTOR Public/Granted day:2009-12-10
Information query
IPC分类: