Invention Grant
US08664997B2 Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage
有权
具有恒定栅源控制电压的快速可切换HV P-MOS功率晶体管驱动器
- Patent Title: Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage
- Patent Title (中): 具有恒定栅源控制电压的快速可切换HV P-MOS功率晶体管驱动器
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Application No.: US12932994Application Date: 2011-03-11
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Publication No.: US08664997B2Publication Date: 2014-03-04
- Inventor: Cang Ji
- Applicant: Cang Ji
- Applicant Address: DE Kirchheim/Teck-Nabern
- Assignee: Dialog Semiconductor GmbH
- Current Assignee: Dialog Semiconductor GmbH
- Current Assignee Address: DE Kirchheim/Teck-Nabern
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Priority: EP11368005 20110307
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
Systems and methods for providing a rapid switchable high voltage power transistor driver with a constant gate-source control voltage have been disclosed. A low voltage control stage keeps the gate-source voltage constant in spite of temperature and process variations. A high voltage supply voltage can vary between about 5.5 Volts and about 40 Volts. The circuit allows a high switching frequency of e.g. 1 MHz and minimizes static power dissipation.
Public/Granted literature
- US20120229173A1 Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage Public/Granted day:2012-09-13
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