Invention Grant
US08664997B2 Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage 有权
具有恒定栅源控制电压的快速可切换HV P-MOS功率晶体管驱动器

  • Patent Title: Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage
  • Patent Title (中): 具有恒定栅源控制电压的快速可切换HV P-MOS功率晶体管驱动器
  • Application No.: US12932994
    Application Date: 2011-03-11
  • Publication No.: US08664997B2
    Publication Date: 2014-03-04
  • Inventor: Cang Ji
  • Applicant: Cang Ji
  • Applicant Address: DE Kirchheim/Teck-Nabern
  • Assignee: Dialog Semiconductor GmbH
  • Current Assignee: Dialog Semiconductor GmbH
  • Current Assignee Address: DE Kirchheim/Teck-Nabern
  • Agency: Saile Ackerman LLC
  • Agent Stephen B. Ackerman
  • Priority: EP11368005 20110307
  • Main IPC: H03L5/00
  • IPC: H03L5/00
Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage
Abstract:
Systems and methods for providing a rapid switchable high voltage power transistor driver with a constant gate-source control voltage have been disclosed. A low voltage control stage keeps the gate-source voltage constant in spite of temperature and process variations. A high voltage supply voltage can vary between about 5.5 Volts and about 40 Volts. The circuit allows a high switching frequency of e.g. 1 MHz and minimizes static power dissipation.
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