Invention Grant
US08664950B2 Method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor
有权
用于测量隧道磁阻传感器中的纵向偏置磁场的方法
- Patent Title: Method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor
- Patent Title (中): 用于测量隧道磁阻传感器中的纵向偏置磁场的方法
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Application No.: US13067887Application Date: 2011-07-01
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Publication No.: US08664950B2Publication Date: 2014-03-04
- Inventor: Siuman Mok , Hokei Lam , Cheukwing Leung , Juren Ding , Rongkwang Ni , Wanyin Kwan , Cheukman Lui , Chiuming Lueng
- Applicant: Siuman Mok , Hokei Lam , Cheukwing Leung , Juren Ding , Rongkwang Ni , Wanyin Kwan , Cheukman Lui , Chiuming Lueng
- Applicant Address: CN Hong Kong
- Assignee: SAE Magnetics (H.K.) Ltd.
- Current Assignee: SAE Magnetics (H.K.) Ltd.
- Current Assignee Address: CN Hong Kong
- Agency: Nixon & Vanderhye, P.C.
- Priority: CN201110074459 20110328
- Main IPC: G01R33/12
- IPC: G01R33/12
Abstract:
A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.
Public/Granted literature
- US20120249130A1 Method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor Public/Granted day:2012-10-04
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