Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13638955Application Date: 2011-09-08
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Publication No.: US08664765B2Publication Date: 2014-03-04
- Inventor: Kazunaga Onishi , Yoshikazu Takamiya , Takaaki Funakoshi , Yoshihiro Kodaira
- Applicant: Kazunaga Onishi , Yoshikazu Takamiya , Takaaki Funakoshi , Yoshihiro Kodaira
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2010-270080 20101203
- International Application: PCT/JP2011/070472 WO 20110908
- International Announcement: WO2012/073572 WO 20120607
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a substrate, an insulating substrate mounted on the substrate, a metal pattern formed on the insulating substrate, an electronic part mounted on the metal pattern across a bond, and a wire member, separate from a wiring wire, which contains a material repellent to the bond and is formed on the metal pattern and around the electronic part.
Public/Granted literature
- US20130020725A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-01-24
Information query
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