Invention Grant
US08664704B2 Electronic component with reactive barrier and hermetic passivation layer
有权
具有反应性屏障和气密钝化层的电子部件
- Patent Title: Electronic component with reactive barrier and hermetic passivation layer
- Patent Title (中): 具有反应性屏障和气密钝化层的电子部件
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Application No.: US13888471Application Date: 2013-05-07
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Publication No.: US08664704B2Publication Date: 2014-03-04
- Inventor: Marina Zelner , Paul Bun Cheuk Woo , Mircea Capanu , Susan C. Nagy , Andrew Vladimir Claude Cervin
- Applicant: Research In Motion RF, Inc.
- Applicant Address: CA Waterloo, Ontario
- Assignee: BlackBerry Limited
- Current Assignee: BlackBerry Limited
- Current Assignee Address: CA Waterloo, Ontario
- Agency: Guntin & Gust, PLC
- Agent Andrew Gust
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
Public/Granted literature
- US20130241036A1 Electronic Component with Reactive Barrier and Hermetic Passivation Layer Public/Granted day:2013-09-19
Information query
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