Invention Grant
US08664622B2 System and method of ion beam source for semiconductor ion implantation
有权
用于半导体离子注入的离子束源的系统和方法
- Patent Title: System and method of ion beam source for semiconductor ion implantation
- Patent Title (中): 用于半导体离子注入的离子束源的系统和方法
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Application No.: US13443994Application Date: 2012-04-11
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Publication No.: US08664622B2Publication Date: 2014-03-04
- Inventor: Chih-Hong Hwang , Chun-Lin Chang , Chi-Ming Yang , Chin-Hsiang Lin , Wen-Yu Ku
- Applicant: Chih-Hong Hwang , Chun-Lin Chang , Chi-Ming Yang , Chin-Hsiang Lin , Wen-Yu Ku
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01J27/00
- IPC: H01J27/00 ; A61N5/00 ; G21G5/00
Abstract:
An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.
Public/Granted literature
- US20130270454A1 SYSTEM AND METHOD OF ION BEAM SOURCE FOR SEMICONDUCTOR ION IMPLANTATION Public/Granted day:2013-10-17
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