Invention Grant
US08664602B2 Wafer-level intrapixel getter reflector whole die encapsulation device and method
有权
晶圆级像素吸收反射器全封装封装装置及方法
- Patent Title: Wafer-level intrapixel getter reflector whole die encapsulation device and method
- Patent Title (中): 晶圆级像素吸收反射器全封装封装装置及方法
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Application No.: US13329428Application Date: 2011-12-19
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Publication No.: US08664602B2Publication Date: 2014-03-04
- Inventor: Richard J. Blackwell, Jr.
- Applicant: Richard J. Blackwell, Jr.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Maine Cernota & Rardin
- Agent David A. Rardin
- Main IPC: G01J5/02
- IPC: G01J5/02

Abstract:
An apparatus and method for a wafer level vacuum package uncooled microbolometer focal plane array (FPA) on a wafer level substrate with a thin film getter-reflector (G-R). The G-R removes gas from the vacuum package and is reflective in the frequency band of the FPA. Sensor pixels are supported about a quarter-wavelength above the G-R which is within the perimeter of the imaging array. The package is evacuated through a single aperture, and vacuum is maintained for the lifetime of the FPA. Imaging sensor size is reduced while maintaining resolution by reducing non-imaging area.
Public/Granted literature
- US20130153766A1 WAFER-LEVEL INTRAPIXEL GETTER REFLECTOR WHOLE DIE ENCAPSULATION DEVICE AND METHOD Public/Granted day:2013-06-20
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