Invention Grant
US08664578B2 Image sensor with reduced crosstalk having an isolation region with a second trench in the electrically conductive material of a first trench
有权
具有减小的串扰的图像传感器具有在第一沟槽的导电材料中具有第二沟槽的隔离区域
- Patent Title: Image sensor with reduced crosstalk having an isolation region with a second trench in the electrically conductive material of a first trench
- Patent Title (中): 具有减小的串扰的图像传感器具有在第一沟槽的导电材料中具有第二沟槽的隔离区域
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Application No.: US13333884Application Date: 2011-12-21
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Publication No.: US08664578B2Publication Date: 2014-03-04
- Inventor: Flavien Hirigoyen , Julien Michelot
- Applicant: Flavien Hirigoyen , Julien Michelot
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Priority: FR1005004 20101221
- Main IPC: H01L27/00
- IPC: H01L27/00
Abstract:
An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.
Public/Granted literature
- US20120153127A1 IMAGE SENSOR WITH REDUCED CROSSTALK Public/Granted day:2012-06-21
Information query
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