Invention Grant
- Patent Title: High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
- Patent Title (中): 大功率效率，大衬底，多晶CdTe薄膜半导体光伏电池结构生长的分子束外延以高沉积速率用于太阳能发电
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Application No.: US12505369Application Date: 2009-07-17
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Publication No.: US08664524B2Publication Date: 2014-03-04
- Inventor: James David Garnett
- Applicant: James David Garnett
- Applicant Address: US CA Westlake Village
- Assignee: Uriel Solar, Inc.
- Current Assignee: Uriel Solar, Inc.
- Current Assignee Address: US CA Westlake Village
- Agency: Wilson Sonsini Goodrich & Rosati
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00
Abstract:
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
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