Invention Grant
US08664126B2 Selective deposition of polymer films on bare silicon instead of oxide surface
有权
聚合物膜在裸硅上的选择性沉积代替氧化物表面
- Patent Title: Selective deposition of polymer films on bare silicon instead of oxide surface
- Patent Title (中): 聚合物膜在裸硅上的选择性沉积代替氧化物表面
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Application No.: US13456524Application Date: 2012-04-26
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Publication No.: US08664126B2Publication Date: 2014-03-04
- Inventor: Daping Yao
- Applicant: Daping Yao
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of selective deposition on silicon substrates having regions of bare silicon and regions of oxide formed thereon. The method includes placing the substrate on a wafer support inside a processing chamber, introducing a carbon-containing gas into the reactor, applying a bias to the substrate, generating a plasma from the hydrocarbon gas, implanting carbon ions into the regions of oxide on the substrate by a plasma doping process, and depositing a carbon-containing film on the bare silicon regions.
Public/Granted literature
- US20120315740A1 SELECTIVE DEPOSITION OF POLYMER FILMS ON BARE SILICON INSTEAD OF OXIDE SURFACE Public/Granted day:2012-12-13
Information query
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