Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US13310365Application Date: 2011-12-02
-
Publication No.: US08664122B2Publication Date: 2014-03-04
- Inventor: Minda Hu , Dongjiang Wang , Haiyang Zhang
- Applicant: Minda Hu , Dongjiang Wang , Haiyang Zhang
- Applicant Address: CN Beijing
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Beijing
- Agency: Koppel, Patrick, Heybl & Philpott
- Agent Michael J. Ram
- Priority: CN201110220347 20110803
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
The present invention discloses a method of fabricating a semiconductor device. In the present invention, after the formation of a photo-resist mask on a substrate, the photo-resist is subjected to a plasma pre-treatment, and then etch is conducted. With the plasma pre-treatment, a line width roughness of a linear pattern of the photo-resist can be improved, and thus much better linear patterns can be formed on the substrate during the subsequent etching steps.
Public/Granted literature
- US20130034960A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2013-02-07
Information query
IPC分类:
