Invention Grant
US08664109B2 Advanced low k cap film formation process for nano electronic devices
有权
用于纳米电子器件的高级低k帽成膜工艺
- Patent Title: Advanced low k cap film formation process for nano electronic devices
- Patent Title (中): 用于纳米电子器件的高级低k帽成膜工艺
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Application No.: US13444415Application Date: 2012-04-11
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Publication No.: US08664109B2Publication Date: 2014-03-04
- Inventor: Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
- Applicant: Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,Global Foundries, Inc.
- Current Assignee: International Business Machines Corporation,Global Foundries, Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/31
Abstract:
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
Public/Granted literature
- US20120202354A1 ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES Public/Granted day:2012-08-09
Information query
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