Invention Grant
- Patent Title: Mitigation of silicide formation on wafer bevel
- Patent Title (中): 减少晶圆斜面上的硅化物形成
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Application No.: US13958391Application Date: 2013-08-02
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Publication No.: US08664105B2Publication Date: 2014-03-04
- Inventor: Andreas Fischer , William Scott Bass
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/31 ; H01L21/469 ; H01L21/66
Abstract:
A method for processing a wafer with a wafer bevel that surrounds a central region is provided. The wafer is placed in a bevel plasma processing chamber. A protective layer is deposited on the wafer bevel without depositing the protective layer over the central region. The wafer is removed from the bevel plasma processing chamber. The wafer is further processed.
Public/Granted literature
- US20130316547A1 MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL Public/Granted day:2013-11-28
Information query
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