Invention Grant
US08664104B2 Method of producing a device with transistors strained by means of an external layer
有权
制造具有通过外部层应变的晶体管的器件的方法
- Patent Title: Method of producing a device with transistors strained by means of an external layer
- Patent Title (中): 制造具有通过外部层应变的晶体管的器件的方法
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Application No.: US13591407Application Date: 2012-08-22
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Publication No.: US08664104B2Publication Date: 2014-03-04
- Inventor: Fabrice Nemouchi , Patrice Gergaud , Thierry Poiroux , Bernard Previtali
- Applicant: Fabrice Nemouchi , Patrice Gergaud , Thierry Poiroux , Bernard Previtali
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1157530 20110825
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of producing a microelectronic device with transistors wherein a strain layer is formed on a series of transistors and the strain exerted on at least one given transistor of said series is released by removing a sacrificial layer situated between said given transistor and said strain layer.
Public/Granted literature
- US20130214362A1 METHOD OF PRODUCING A DEVICE WITH TRANSISTORS STRAINED BY MEANS OF AN EXTERNAL LAYER Public/Granted day:2013-08-22
Information query
IPC分类:
