Invention Grant
- Patent Title: Manufacturing high efficiency solar cell with directional doping
- Patent Title (中): 制造具有定向掺杂的高效太阳能电池
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Application No.: US13175298Application Date: 2011-07-01
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Publication No.: US08664100B2Publication Date: 2014-03-04
- Inventor: Atul Gupta
- Applicant: Atul Gupta
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L31/18
Abstract:
A first facet of each of a plurality of pyramids on a surface of a workpiece is doped to a first dose while a second facet and a third facet of each of the plurality of pyramids is simultaneously doped to a second dose different than the first dose. The first facets may enable low resistance contacts and the second and third facets may enable higher current generation and an improved blue response. Ion implantation may be used to perform the doping.
Public/Granted literature
- US20120006392A1 MANUFACTURING HIGH EFFICIENCY SOLAR CELL WITH DIRECTIONAL DOPING Public/Granted day:2012-01-12
Information query
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